silicon rf power semiconductors ra rara ra03m8894 03m8894 03m8894 03m8894m mm m rohs compliance , 889-941mhz 3.6w 7.2v, 2 stage amp. for portable radio ra03m8894m 28 jun 2010 1/9 electrostatic sensitive device observe handling precautions description the ra03m8894m is a 3.6-watt rf mosfet amplifier module for 7.2-volt portable radios that operate in the 889- to 941-mhz range. the battery can be connected directly to the drain of the enhancement-mode mosfet transistors. without the ga te voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal attenuates up to 60 d b. the output power and drain current increase as the gate voltag e increases. with a gate voltage around 2.5v (minimum), output p ower and drain current increases substantially. the nominal output power becomes available at 3v (typical) and 3.5v (maximum ). at v gg =3.5v, the typical gate current is 1 ma. this module is designed for non-linear fm modulatio n, but may also be used for linear modulation by setting the d rain quiescent current with the gate voltage and controlling the o utput power with the input power. features ? enhancement-mode mosfet transistors (i dd @ 0 @ v dd =7.2v, v gg =0v) ? p out >3.6w @ v dd =7.2v, v gg =3.5v, p in =50mw ? h t >32% @ p out =3w (v gg control), v dd =7.2v, p in =50mw ? broadband frequency range: 889-941mhz ? low-power control current i gg =1ma (typ) at v gg =3.5v ? module size: 30 x 10 x 5.4 mm ? linear operation is possible by setting the quies cent drain current with the gate voltage and controlling the o utput power with the input power rohs compliant ? ra03m8894m-101 is a rohs compliant products. ? rohs compliance is indicate by the letter g aft er the lot marking. ? this product include the lead in the glass of ele ctronic parts and the lead in electronic ceramic parts. how ever, it applicable to the following exceptions of rohs directions. 1.lead in the glass of a cathode-ray tube, electron ic parts, and fluorescent tubes. 2.lead in electronic ceramic parts. ordering information: order number supply form ra03m8894m-101 antistatic tray, 50 modules/tray block diagram 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) 3 2 4 1 5 package code: h46s
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 2/9 electrostatic sensitive device observe handling precautions maximum ratings (t case =+25c, unless otherwise specified) symbol parameter conditions rating unit v dd drain voltage v gg <3.5v 9.2 v v gg gate voltage v dd <7.2v, p in =0mw 4 v p in input power 70 mw p out output power 5 w t case(op) operation case temperature range f=889-941mhz, z g =z l =50 w -30 to +90 c t stg storage temperature range -40 to +110 c the above parameters are independently guaranteed. electrical characteristics (t case =+25c, z g =z l =50 w , unless otherwise specified) symbol parameter conditions min typ max unit f frequency range 889 - 941 mhz p out output power v dd =7.2v,v gg =3.5v, p in =50mw 3.6 - - w h t total efficiency 32 - - % 2f o 2 nd harmonic - - -30 dbc r in input vswr - - 4:1 i gg gate current p out =3w (v gg control), v dd =7.2v, p in =50mw - 1 - ma stability v dd =4.0-9.2v, p in =25-70mw, p out <5w (v gg control), load vswr=4:1 no parasitic oscillation load vswr tolerance v dd =9.2v, p in =50mw, p out =3.6w (v gg control), load vswr=20:1 no degradation or destroy all parameters, conditions, ratings, and limits are subject to change without notice.
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 3/9 electrostatic sensitive device observe handling precautions output power, total efficiency, and input vswr versus frequency output power, power gain and output power, power gain and drain current versus input power drain current versus input power 0 1 2 3 4 5 6 7 8 870 880 890 900 910 920 930 940 950 960 frequency f(mhz) output power p out (w) input vswr r in (-) 0 10 20 30 40 50 60 70 80 total efficiency h t (%) v dd =7.2v p in =50mw p out @v gg =3.5v h hh h t @p out =3.0w r rr r in @p out =3.0w 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 1 2 3 4 5 drain current i dd (a) f=889mhz, v dd =7.2v, v gg =3.5v p out i dd gp 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 1 2 3 4 5 drain current i dd (a) f=914mhz, v dd =7.2v, v gg =3.5v p out gp i dd output power, power gain and drain current versus input power output power and drain current output power and drain current versus drain voltage versus drain voltage 0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10 drain voltage v dd (v) output power p out (w) 0 1 2 3 4 5 drain current i dd (a) p out f=889mhz, v gg =3.5v, p in =50mw i dd 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 1 2 3 4 5 drain current i dd (a) f=941mhz, v dd =7.2v, v gg =3.5v p out gp i dd 0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10 drain voltage v dd (v) output power p out (w) 0 1 2 3 4 5 drain current i dd (a) p out f=914mhz, v gg =3.5v, p in =50mw i dd typical performance (t case =+25c, z g =z l =50 w , unless otherwise specified)
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 4/9 electrostatic sensitive device observe handling precautions output power and drain current versus drain voltage output power and drain current output power and drain current versus gate voltage versus gate voltage output power and drain current versus gate voltage 0 1 2 3 4 5 6 7 8 1 1.5 2 2.5 3 3.5 4 gate voltage v gg (v) output power p out (w) 0 1 2 3 4 drain current i dd (a) p out f=889mhz, v dd =7.2v, p in =50mw i dd 0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10 drain voltage v dd (v) output power p out (w) 0 1 2 3 4 5 drain current i dd (a) p out f=941mhz, v gg =3.5v, p in =50mw i dd 0 1 2 3 4 5 6 7 8 1 1.5 2 2.5 3 3.5 4 gate voltage v gg (v) output power p out (w) 0 1 2 3 4 drain current i dd (a) p out f=915mhz, v dd =7.2v, p in =50mw i dd 0 1 2 3 4 5 6 7 8 1 1.5 2 2.5 3 3.5 4 gate voltage v gg (v) output power p out (w) 0 1 2 3 4 drain current i dd (a) p out f=941mhz, v dd =7.2v, p in =50mw i dd typical performance (t case =+25c, z g =z l =50 w , unless otherwise specified)
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 5/9 electrostatic sensitive device observe handling precautions outline drawing (mm) 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case)
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 6/9 electrostatic sensitive device observe handling precautions 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case) c1, c2 : 4700pf, 22uf in parallel directional coupler attenuator power meter spectrum analyzer signal generator attenuator pre- amplifier power meter directional coupler dut 5 4 3 2 1 z g =50 w z l =50 w c1 c2 - + dc power supply v gg + - dc power supply v dd test block diagram attenuator equivalent circuit 2 3 1 5 4
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 7/9 electrostatic sensitive device observe handling precautions recommendations and application information: construction: this module consists of an alumina substrate solder ed onto a copper flange. for mechanical protection, a plastic cap is attached with silicone. the mosfet transisto r chips are die bonded onto metal, wire bonded to t he substrate, and coated with resin. lines on the substrate (even tually inductors), chip capacitors, and resistors f orm the bias and matching circuits. wire leads soldered onto the alu mina substrate provide the dc and rf connection. following conditions must be avoided: a) bending forces on the alumina substrate (for exa mple, by driving screws or from fast thermal change s) b) mechanical stress on the wire leads (for example , by first soldering then driving screws or by ther mal expansion) c) defluxing solvents reacting with the resin coati ng on the mosfet chips (for example, trichlorethyle ne) d) frequent on/off switching that causes thermal ex pansion of the resin e) esd, surge, overvoltage in combination with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages dow n to 1000v. appropriate esd precautions are require d. mounting: heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module a nd heat sink may cause the ceramic substrate in the module to cr ack by bending forces, either immediately when driv ing screws or later when thermal expansion forces are added). a thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat si nk. the module must first be screwed to the heat sink, then the leads can be soldered to the printed circu it board. m2.6 screws are recommended with a tightening torqu e of 1.8 to 3.0 kgf-cm. soldering and defluxing: this module is designed for manual soldering. the lead (terminal) must be soldered after the modu le is screwed onto the heat sink. the temperature of the lead (terminal) soldering sh ould be lower than 350c and shorter than 3 second. ethyl alcohol is recommend for removing flux. trich loroethylene solvents must not be used (they may ca use bubbles in the coating of the transistor chips which can li ft off the bond wires). thermal design of the heat sink: at p out =3w, v dd =7.2v and p in =50mw each stage transistor operating conditions ar e: stage p in (w) p out (w) r th(ch-case) (c/w) i dd @ h t =32% (a) v dd (v) 1 st 0.05 0.8 4.5 0.30 2 nd 0.8 3.0 4.3 1.00 7.2 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch-case) are: t ch1 = t case + (7.2v x 0.30a C 0.8w + 0.05w) x 4.5c/w = t case + 6.3 c t ch2 = t case + (7.2v x 1.00a C 3.0w + 0.8w) x 4.3c/w = t case + 21.5 c for long-term reliability, it is best to keep the m odule case temperature (t case ) below 90c. for an ambient temperature t air =60c and p out =3w, the required thermal resistance r th (case-air) = ( t case - t air ) / ( (p out / h t ) - p out + p in ) of the heat sink, including the contact resistan ce, is: r th(case-air) = (90c - 60c) / (3w/32% C 3w + 0.05w) = 4.67 when mounting the module with the thermal resistanc e of 4.67w, the channel temperature of each stage t ransistor is: t ch1 = t air + 36.3 c t ch2 = t air + 51.5 c the 175c maximum rating for the channel temperatur e ensures application under derated conditions.
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 8/9 electrostatic sensitive device observe handling precautions output power control: depending on linearity, the following two methods a re recommended to control the output power: a) non-linear fm modulation: by the gate voltage (v gg ). when the gate voltage is close to zero, the rf inpu t signal is attenuated up to 60 db and only a small leakage current flows from the battery into the drain. around v gg =2.5v, the output power and drain current increases substantially. around v gg =3v (typical) to v gg =3.5v (maximum), the nominal output power becomes a vailable. b) linear am modulation: by rf input power p in . the gate voltage is used to set the drains quie scent current for the required linearity. oscillation: to test rf characteristics, this module is put on a fixture with two bias decoupling capacitors each o n gate and drain, a 4.700 pf chip capacitor, located close to the mod ule, and a 22 f (or more) electrolytic capacitor. when an amplifier circuit around this module shows oscillation, the following may be checked: a) do the bias decoupling capacitors have a low ind uctance pass to the case of the module? b) is the load impedance z l =50 w ? c) is the source impedance z g =50 w ? attention: 1.high temperature; this product might have a heat generation while operation,please take notice that have a possibility to receive a burn to touch the operatin g product directly or touch the product until cold after switch off. at the near the product,do not place the combustibl e material that have possibilities to arise the fir e. 2. generation of high frequency power; this product generate a high frequency power. please take notic e that do not leakage the unnecessary electric wave and use t his products without cause damage for human and pro perty per normal operation. 3. before use; before use the product,please desig n the equipment in consideration of the risk for hu man and electric wave obstacle for equipment. precaution for the use of mitsubishi silicon rf pow er amplifier devices: 1.the specifications of mention are not guarantee v alues in this data sheet. please confirm additional details regarding operation of these products from the form al specification sheet. for copies of the formal s pecification sheets, please contact one of our sales offices. 2.ra series products (rf power amplifier modules) a re designed for consumer mobile communication termi nals and were not specifically designed for use in other app lications. in particular, while these products are highly reliable for their designed purpose, they are not manufactur ed under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically dee med necessary for critical communications elements. examples of critical communications elements would include tran smitters for base station applications and fixed st ation applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3.ra series products use mosfet semiconductor techn ology. they are sensitive to esd voltage therefore appropriate esd precautions are required. 4.in order to maximize reliability of the equipment , it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as neede d (fan, etc.) to keep the case temperature for ra series products lower than 60deg/c under standard conditions, and less than 90deg/c under extreme conditions. 5.ra series products are designed to operate into a nominal load impedance of 50 ohms. under the condi tion of operating into a severe high load vswr approaching an open or short, an over load condition could occu r. in the worst case there is risk for burn out of the transi stors and burning of other parts including the subs trate in the module. 6.the formal specification includes a guarantee aga inst parasitic oscillation under a specified maximu m load mismatch condition. the inspection for parasitic os cillation is performed on a sample basis on our manufacturing line. it is recommended that verification of no par asitic oscillation be performed at the completed equipment level also. 7.for specific precautions regarding assembly of th ese products into the equipment, please refer to th e supplementary items in the specification sheet. 8.warranty for the product is void if the products protective cap (lid) is removed or if the product i s modified in any way from its original form. 9.for additional safety first in your circuit des ign and notes regarding the materials, please refer the last page of this data sheet. 10. please refer to the additional precautions in t he formal specification sheet.
silicon rf power semiconductors rohs compliant ra rara ra03m8894 03m8894 03m8894 03m8894m mm m ra03m8894m 28 jun 2010 9/9 electrostatic sensitive device observe handling precautions m itsubishi electric corporation puts the maximum eff ort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit de signs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to ass ist our customers in the selection of the mitsubish i semiconductor product best suited to the customers application; they do not convey any license under any intellectual property rights, or any other righ ts, belonging to mitsubishi electric corporation or a third party. - mitsubishi electric corporation assumes no respon sibility for any damage, or infringement of any third-partys rights, originating in the use of any product data, diagrams, charts, programs, algorith ms, or circuit application examples contained in these materials. - all information contained in these materials, inc luding product data, diagrams, charts, programs and algorithms represents information on products at th e time of publication of these materials, and are subject to change by mitsubishi electric corporatio n without notice due to product improvements or other reasons. it is therefore recommended that cus tomers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product dist ributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corpor ation assumes no responsibility for any damage, liability, or other loss rising from these inaccura cies or errors. please also pay attention to inform ation published by mitsubishi electric corporation by var ious means, including the mitsubishi semiconductor home page (http://www.mitsubishichips.com). - when using any or all of the information containe d in these materials, including product data, diagr ams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damag e, liability or other loss resulting from the information contained herein. - mitsubishi electric corporation semiconductors ar e not designed or manufactured for use in a device or system that is used under circumstances in which hu man life is potentially at stake. please contact mitsubishi electric corporation or an authorized mi tsubishi semiconductor product distributor when considering the use of a product contained herein f or any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aer ospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce i n whole or in part these materials. - if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese governme nt and cannot be imported into a country other than the appr oved destination. notes regarding these materials
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